榓壧嶳戝妛 僔僗僥儉岺妛晹 惛枾暔幙妛壢 僫僲僒僀僄儞僗宯 暔惈棟榑尋媶幒

Introduction

摉尋媶幒強懏偺妛惗偑擔崰偺尋媶偱摼傜傟偨惉壥傪妛夛側偳偱敪昞偟偨儕僗僩偱偡丅

仴妛夛敪昞

娸丂嵤崄偝傫乮H28擭搙廋巑2擭乯
  • 娸 嵤崄丄彫揷 彨恖丄幝捤 梇嶰
    乽拏壔暔崿徎敿摫懱偺IQB棟榑偵傛傞揹巕忬懺寁嶼乿
    戞27夞 岝暔惈尋媶夛(恄屗戝妛)丄III A-70丂2016擭12寧3擔
  • Ayaka Kishi, Masato Oda, and Yuzo Shinozuka
    乽Electronic States of III-V and II-VI Alloys Calculated by IQB theory乿
    Compound Semiconductor Week 2016(晉嶳崙嵺夛媍応)丂MoP-ISCS-094丂2016擭6寧27擔
  • 娸 嵤崄丄彫揷 彨恖丄幝捤 梇嶰
    乽拏壔暔崿徎敿摫懱偺 IQB 棟榑 偵傛傞揹巕忬懺寁嶼乿
    戞8夞 拏壔暔敿摫懱寢徎惉挿島墘夛乮嫗搒戝妛 宩僉儍儞僷僗乯Tu-17丂2016擭5寧10擔
  • 娸丂嵤崄丆彫揷彨恖丆幝捤梇嶰
    乽崿徎壔崌暔敿摫懱偺IQB model偵傛傞揹巕忬懺寁嶼丗III-V(ZB)乿
    戞76夞墳梡暔棟妛夛廐婫妛弍島墘夛(柤屆壆崙嵺夛媍応)丂14a-2W-1 2015擭 9寧14擔
拞栰桭搇孨乮H28擭搙廋巑2擭乯
  • 拞栰桭搇丆彫揷彨恖丆幝捤梇嶰
    乽巁壔僈儕僂儉拞偺巁慺嬻岴偵傛傞僶儞僪暘嶶曄壔乿
    擔杮暔棟妛夛戞71夞擭師戝夛(嬥戲戝妛)丂14pSA-24丂2016擭 9寧14擔
摗杮摽柧孨乮H27擭搙廋巑2擭乯
  • 摗杮摽柧丆彫揷彨恖丆幝捤梇嶰
    乽IQB棟榑偵傛傞II-VI懓壔崌暔敿摫懱偺揹巕忬懺偺寁嶼乿
    戞63夞墳梡暔棟妛夛弔婫妛弍島墘夛(搶嫗岺嬈戝妛)丂21p-P8-4丂2016擭 3寧21擔
徏揷堦恀孨乮H27擭搙廋巑2擭乯
  • 徏揷堦恀丆幝捤梇嶰
    乽帺屓懇敍椼婲巕娫偺嫤椡揑憡屳嶌梡乿
    戞63夞墳梡暔棟妛夛弔婫妛弍島墘夛(搶嫗岺嬈戝妛)丂19p-P11-10丂2016擭 3寧19擔
捯旜寬巙孨乮H27擭搙廋巑2擭乯
  • 捯旜寬巙丄彫揷彨恖丄幝捤梇嶰
    乽GaN拞偺寚娮偵偍偗傞奿巕曄埵偑堷偒婲偙偡揹巕忬懺曄壔偺戞堦尨棟寁嶼乿
    戞76夞墳梡暔棟妛夛廐婫妛弍島墘夛(柤屆壆崙嵺夛媍応)丂14p-PB12-6 2015擭 9寧14擔
悈墇棽戝孨乮H26擭搙廋巑2擭乯
  • Takahiro MIZUKOSHI, Masato ODA, and Yuzo SHINOZUKA
    乽First-Principles Calculation for Initial Oxidation Process on Ge(100) Surfaces乿
    IUMRS-ICA (Fukuoka, Japan) 丂2014擭 8寧28擔
  • 悈墇棽戝丆彫揷彨恖丆幝捤梇嶰
    乽Ge(100)昞柺偵偍偗傞弶婜巁壔偺夁掱偺戞堦尨棟寁嶼乿
    擔杮暔棟妛夛戞69夞擭師戝夛(搶奀戝妛)丂19p-P11-10丂2014擭 3寧27擔
摗愳梇暫孨乮H25擭搙廋巑2擭乯
  • 摗愳梇暫丄幝捤梇嶰
    乽崿徎敿摫懱偺揹巕忬懺偺棟榑丗旕懳妏棎傟乿
    戞24夞岝暔惈尋媶夛丂嘨A-98丂2013擭12寧14擔
揷拞丂椓孨乮H24擭搙廋巑2擭乯
  • 揷拞丂椓丄彫揷彨恖丄幝捤梇嶰
    乽Si(100)昞柺忋偵偍偗傞僗僠儗儞-NH2嵔偺峔憿埨掕惈乿
    擔杮暔棟妛夛戞68夞廐婫戝夛乮摽搰戝妛乯27PSA-41丂2013擭9寧27擔
榚揷徆婭孨乮H24擭搙廋巑2擭乯
撿敆戝庽孨乮H24擭搙廋巑2擭乯
桏壓憦椙孨乮H24擭搙廋巑2擭乯
楅栘孿埲孨乮H23擭搙廋巑2擭乯
尨丂垽旤偝傫乮H22擭搙廋巑2擭乯
  • 尨丂垽旤丄幝捤梇嶰
    乽壔崌暔崿徎敿摫懱偺揹巕忬懺偺棟榑乿
    戞21夞岝暔惈尋媶夛丂2010擭12寧10擔
  • 尨丂垽旤丄幝捤梇嶰
    乽崿徎敿摫懱偺揹巕忬懺偺棟榑揑尋媶乿
    戞71夞墳梡暔棟妛夛丂2010擭9寧16擔
彫抮丂岟崉孨乮H21擭搙廋巑2擭乯
  • 彫抮岟崉丄彫揷彨恖丄幝捤梇嶰
    乽Lithium Phtalocyanine Iodide (LiPcIx) 寢徎偺揹巕忬懺乿
    擔杮暔棟妛夛戞65夞擭師戝夛丂2010擭3寧23擔
  • Noritake Koike, Masato Oda, and Yuzo Shinozuka
    "The smallest diameter of semiconducting Carbon Nanotube"
    ISPEN-2009, Wakayama, 20 November 2009
搶丂弒孨乮H21擭搙廋巑2擭乯
  • 搶弒丄幝捤梇嶰
    乽僫僲僠儏乕僽偱偺揹巕偺検巕揑揱斃偺棟榑乿
    墳梡暔棟妛娭楢楢崌島墘夛2010擭弔婫丂2010擭3寧19擔
  • Masayuki Negoro, Satoshi Matsutani, Takashi Higashi, and Yuzo Shinozuka
    "Mechanism of Capture-Enhanced Defect Reactions in Semiconductors"
    ISPEN-2009, Wakayama, 20 November 2009
怷丂慞旻孨乮H21擭搙廋巑2擭乯
擔栰丂撃孨乮H21擭搙廋巑2擭乯
徏扟丂憦孨乮H20擭搙廋巑2擭乯
  • 徏扟丂憦丄幝捤梇嶰
    乽係攝埵寢崌宯偵偍偗傞峔憿曄壔偺棟榑乿
    戞19夞岝暔惈尋媶夛丂2008擭12寧 6擔 戝嶃巗棫戝妛妛弍忣曬憤崌僙儞僞乕
彫嶳壝桽孨乮H19擭搙廋巑2擭乯
  • 彫嶳壝桽丄彫揷彨恖丄幝捤梇嶰
    乽SW寚娮偵偍偗傞僇乕儃儞僫僲僠儏乕僽偺桿揹墳摎曄壔乿
    戞18夞岝暔惈尋媶夛丂2007擭12寧14擔 戝嶃巗棫戝妛妛弍忣曬憤崌僙儞僞乕
惣丂宑巕偝傫乮H18擭搙廋巑2擭乯
  • 惣丂宑巕丄幝捤梇嶰
    乽擇憌僇乕儃儞僫僲僠儏乕僽偱偺椼婲巕忬懺乿
    戞17夞岝暔惈尋媶夛丂2006擭12寧 9擔 戝嶃巗棫戝妛妛弍忣曬憤崌僙儞僞乕
崅嫶塸巌孨乮H18擭搙廋巑2擭乯
  • 崅嫶塸巌丄幝捤梇嶰
    乽崿徎敿摫懱傪梡偄偨検巕堜屗峔憿偺揹巕忬懺乿
    戞17夞岝暔惈尋媶夛丂2006擭12寧 8擔 戝嶃巗棫戝妛妛弍忣曬憤崌僙儞僞乕
崅嫶堦暯孨乮H15擭搙廋巑2擭乯
  • 崅嫶堦暯丄幝捤梇嶰
    乽係攝埵嫟桳寢崌敿摫懱拞偺Td懳徧宆晄弮暔偵偍偗傞揹巕椼婲峔憿曄壔乿
    戞50夞墳梡暔棟妛夛娭學楢崌島墘夛丂2003擭丂3寧29擔 恄撧愳戝妛
  • I. Takahashi and Y. Shinozuka
    乽Structural Changes at a Td impurity induced by intra-photoexcitation and carrier capture乿
    The 22nd Int. Conf. on Defect in Semiconductor丂2003擭 8寧 1擔 Arhus University (Denmark)
© 榓壧嶳戝妛 僔僗僥儉岺妛晹 惛枾暔幙妛壢 僫僲僒僀僄儞僗宯 暔惈棟榑尋媶幒